Scaling Effect on Unipolar and Bipolar Resistive Switching of Metal Oxides
Citations Over TimeTop 10% of 2013 papers
Abstract
Electrically driven resistance change in metal oxides opens up an interdisciplinary research field for next-generation non-volatile memory. Resistive switching exhibits an electrical polarity dependent "bipolar-switching" and a polarity independent "unipolar-switching", however tailoring the electrical polarity has been a challenging issue. Here we demonstrate a scaling effect on the emergence of the electrical polarity by examining the resistive switching behaviors of Pt/oxide/Pt junctions over 8 orders of magnitudes in the areas. We show that the emergence of two electrical polarities can be categorised as a diagram of an electric field and a cell area. This trend is qualitatively common for various oxides including NiOx, CoOx, and TiO(2-x). We reveal the intrinsic difference between unipolar switching and bipolar switching on the area dependence, which causes a diversity of an electrical polarity for various resistive switching devices with different geometries. This will provide a foundation for tailoring resistive switching behaviors of metal oxides.
Related Papers
- → The polarity effect of evaluative language(2022)14 cited
- → Polarity Fluctuation Inhibition by Memory in Collective Cell Motion(2021)1 cited
- GaN Polarity and Its Measurement and Application(2002)
- → Mining Chinese Polarity Shifters(2015)
- → Polarity Items(2006)