Multi-spectral imaging with infrared sensitive organic light emitting diode
Citations Over TimeTop 16% of 2014 papers
Abstract
Commercially available near-infrared (IR) imagers are fabricated by integrating expensive epitaxial grown III-V compound semiconductor sensors with Si-based readout integrated circuits (ROIC) by indium bump bonding which significantly increases the fabrication costs of these image sensors. Furthermore, these typical III-V compound semiconductors are not sensitive to the visible region and thus cannot be used for multi-spectral (visible to near-IR) sensing. Here, a low cost infrared (IR) imaging camera is demonstrated with a commercially available digital single-lens reflex (DSLR) camera and an IR sensitive organic light emitting diode (IR-OLED). With an IR-OLED, IR images at a wavelength of 1.2 µm are directly converted to visible images which are then recorded in a Si-CMOS DSLR camera. This multi-spectral imaging system is capable of capturing images at wavelengths in the near-infrared as well as visible regions.
Related Papers
- → Advanced Organic Light-Emitting Devices for Enhancing Display Performances(2005)145 cited
- → Research Trends in Organic Light Emitting Diode(2015)2 cited
- Fundamental Principle and Progrees in Organic Light Emitting Diode (OLED)(2003)
- The Effect of Hole-Injection Layers in Single and Double Stack Organic Light-Emitting Diodes(2011)
- Diodos orgánicos emisores de luz (oleds) y sus bases tecnológicas Organic Light Emitting Diodes (OLEDs) and their technological bases(2011)