Effects of Al addition to Si-based flux on the growth of 4H-SiC films by vapour–liquid–solid pulsed laser deposition
CrystEngComm2017Vol. 19(35), pp. 5188–5193
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Ryo Yamaguchi, Asuka Osumi, Akiko Onuma, K. Nakano, Shingo Maruyama, Takeshi Mitani, Tomohisa Kato, Hajime Okumura, Yuji Matsumoto
Abstract
High-speed growth of 4H-SiC films by VLS-PLD with Si/Al flux at a growth temperature lower than 1300 °C.
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