High-detectivity perovskite-based photodetector using a Zr-doped TiO_xcathode interlayer

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Abstract

We investigated the incorporation of Zr into TiO _x cathode interlayers used as hole-blocking layers in an organometallic halide perovskite-based photodetector. The device configuration is ITO/PEDOT:PSS/CH₃NH₃PbI _x Cl_3-x /PC₆₀BM/Zr-TiO _x /Al. The use of Zr-TiO _x in the perovskite photodetector reduces the leakage current and improves carrier extraction. The performance of the perovskite photodetector was confirmed by analyzing the current-voltage characteristics, impedance behaviors, and dynamic characteristics. The device with a Zr-TiO _x layer has a high specific detectivity of 1.37 × 1013 Jones and a bandwidth of 2.1 MHz at a relatively low reverse bias and light intensity. Therefore, it can be effectively applied to devices such as image and optical sensors.

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