Gate-tunable interfacial properties of in-plane ML MX2 1T′–2H heterojunctions
Journal of Materials Chemistry C2018Vol. 6(21), pp. 5651–5661
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Shiqi Liu, Jingzhen Li, Bowen Shi, Xiuying Zhang, Yuanyuan Pan, Meng Ye, Ruge Quhe, Yangyang Wang, Han Zhang, Jiahuan Yan, Linqiang Xu, Ying Guo, Feng Pan, Jing Lü
Abstract
Schematic diagram of p-type Ohmic contact procedure with the help of the deeply expanded MIGS under a gate voltage for the in-plane ML MX2 1T′–2H heterojunctions.
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