Initial oxidation of GaAs(100) under near-realistic environments revealed by in situ AP-XPS
Chemical Communications2020Vol. 56(94), pp. 14905–14908
Citations Over Time
Abstract
In situ monitoring of initial oxidation of GaAs surfaces was performed under (near-) realistic oxidizing environments, using ambient-pressure X-ray photoelectron spectroscopy (AP-XPS). The surface chemical states drastically change with time. The oxidation process at the sub-nano-meter-scale exhibits a significantly small activation energy, which can be regarded as a quasi-barrier-less oxidation.
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