Memristors mimicking the regulation of synaptic plasticity and the refractory period in the phenomenological model
Journal of Materials Chemistry C2020Vol. 8(15), pp. 5183–5190
Citations Over Time
Xiaobing Yan, Gong Wang, Jianhui Zhao, Zhenyu Zhou, Hong Wang, Lei Zhang, Jingjuan Wang, Xiaoyan Li, Yifei Pei, Cuiya Qin, Qianlong Zhao, Zuoao Xiao, Kaiyang Wang, Hui Li, Jingsheng Chen
Abstract
Herein, a new function in the phenomenological model, namely the principle of refractory period function, is developed based on a W/ZnO/FTO memristor device.
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