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n + -GaAs/undoped GaAlAs/undoped GaAs field-effect transistor
Electronics Letters1984Vol. 20(11), pp. 462–463
Citations Over TimeTop 10% of 1984 papers
Abstract
The first self aligned accumulation-mode GaAs MIS-like FET having an n+ -GaAs/undoped GaAlAs/undoped GaAs structure is reported. The FETs fabricated show the threshold voltage of almost zero (V̅th = 0.035 V) and very uniform (σVth = 0.013 V) characteristics, as expected. The transconductance is as high as 170 mS/mm, which is the highest value ever reported on GaAs MIS-like FETs.
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