1.55 µm vertical-cavity surface-emitting laserswith wafer-fused InGaAsP/InP-GaAs/AlAs DBRs
Electronics Letters1996Vol. 32(16), pp. 1483–1484
Yoshitaka Ohiso, C. Amano, Yoshio Itoh, Kouta Tateno, Takashi Tadokoro, Hirokazu Takenouchi, Takashi Kurokawa
Abstract
The authors propose a novel 1.55 µm vertical-cavity surface-emitting laser (VCSEL) structure with wafer-fused InGaAsP/InP-GaAs/AlAs distributed Bragg reflectors. The resonant-cavity wavelength before water fusion is in exact accord with the emission wavelength, and a 25 µm diameter VCSEL exhibits CW operation at 27°C.
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