High-temperature operation of 1.3 µm AlGaInAsstrained multiplequantum well lasers
Electronics Letters1998Vol. 34(12), pp. 1231–1233
Citations Over TimeTop 10% of 1998 papers
Abstract
High-temperature operation of 1.3 µm AlGaInAs/InP strained multiple quantum well lasers is demonstrated. An excellent CW characteristic temperature of 111 K was obtained between 20 and 80°C and a record high operating temperature of 210°C was achieved with a 700 µm long laser under pulse excitation. Power reductions at a constant current with increasing temperature were also evaluated at 80°C to be –1.27 and –1.67 dB under pulse and CW excitations, respectively.
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