High performance quantum dot lasers on GaAs substrates operating in 1.5 µm range
Electronics Letters2003Vol. 39(15), pp. 1126–1128
Citations Over TimeTop 1% of 2003 papers
N. N. Ledentsov, A. R. Kovsh, A. E. Zhukov, N. A. Maleev, S. S. Mikhrin, А. П. Васильев, Elizaveta Semenova, M. V. Maximov, Yu. M. Shernyakov, N. V. Kryzhanovskaya, V. M. Ustinov, D. Bimberg
Abstract
Stacked InAs/InGaAs quantum dots are used as an active media of metamorphic InGaAs–InGaAlAs lasers grown on GaAs substrates by molecular beam epitaxy. High quantum efficiency (ηi>60%) and low internal losses (α<3–4 cm−1) are realised. The transparency current density per single QD layer is estimated as ∼70 A/cm2 and the characteristic temperature is 60 K (20–85°C). The emission wavelength exceeds 1.51 µm at temperatures above 60°C.
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