1.3 µm InAs/GaAs multilayer quantum-dot laser with extremely low room-temperature threshold current density
Electronics Letters2004Vol. 40(22), pp. 1412–1413
Citations Over TimeTop 10% of 2004 papers
Ian R. Sellers, H.Y. Liu, K. M. Groom, David Childs, David J. Robbins, T. J. Badcock, M. Hopkinson, D. J. Mowbray, M. S. Skolnick
Abstract
A high growth temperature step used for the GaAs spacer layer is shown to significantly improve the performance of 1.3 µm multilayer InAs/GaAs quantum-dot lasers. Extremely low room-temperature continuous-wave threshold current densities of 32.5 and 17 A/cm2 are achieved for a three-layer device with as-cleaved facets and high-reflectivity coated facets, respectively.
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