Stress effects in the oxidation of planar silicon substrates
Applied Physics Letters1999Vol. 74(14), pp. 1981–1983
Citations Over TimeTop 11% of 1999 papers
Abstract
We report here on the results of a series of experiments in which constant, controlled levels of in-plane stress were applied to oxidizing silicon substrates. The results indicate that compressive stresses tend to retard the growth of the oxide layer, while tensile stresses have an uncertain effect. These results are at variance with the predictions of a widely held model for the effect of stress upon the oxidation of silicon.
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