From nucleation to coalescence of Cu2O islands during in situ oxidation of Cu(001)
Applied Physics Letters2002Vol. 81(2), pp. 241–243
Citations Over TimeTop 16% of 2002 papers
Abstract
The nucleation, growth, and coalescence of Cu2O islands due to oxidation of Cu(001) films were visualized by in situ ultrahigh-vacuum transmission electron microscopy. We have previously demonstrated that the nucleation and initial growth of copper oxides is dominated by oxygen surface diffusion. These surface models have been extended to quantitatively represent the coalescence behavior of copper oxidation in the framework of the Johnson–Mehl–Avrami–Kolmogorov theory. An excellent agreement exists between the experimental data of nucleation to coalescence with the surface model. The implication could be an alternate paradigm for passivation and oxidation, since classic theories assume uniform film growth.
Related Papers
- → Sulfur passivation of 3C-SiC thin film(2018)4 cited
- → Nucleation theory: Present status and outstanding problems(1978)26 cited
- Development of High Performance Chromium-Free Passivation Agent Suitable for Coating of Aluminum Alloy and Optimization of Passivation Technology(2012)
- → Nucleation and Growth of Metallic Thin Films(2016)
- Passivation method of 317L stainless steel used in medicine(2002)