Nonlinear change of refractive index of Co3O4 thin films induced by semiconductor laser (λ=405 nm) irradiation
Applied Physics Letters2002Vol. 81(6), pp. 999–1001
Citations Over TimeTop 18% of 2002 papers
Abstract
Nonlinear change of the refractive index (n) and extinction coefficient (k) of Co3O4 thin films induced by a laser with λ=405 nm (hν=3.06 eV) irradiation was evaluated using equipment having an ellipsometric optical configuration. Nonlinear refractive index (n2) and extinction coefficient (k2) were +1.0×10−10 m2/W (positive) and −2.6×10−11 m2/W (negative), respectively. n2 and k2 at λ=650 nm (hν=1.91 eV) were −5.5×10−11 m2/W and −8.7×10−11 m2/W (both have negative signs). From these results and the fact that the Co3O4 thin film has the band-gap energy of 2.06 eV, the band filling effect can be seen as one of the most probable models describing the large nonlinear change of n and k of Co3O4 thin film.
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