Switching dynamics in titanium dioxide memristive devices

Citations Over TimeTop 1% of 2009 papers

Abstract

Memristive devices are promising components for nanoelectronics with applications in nonvolatile memory and storage, defect-tolerant circuitry, and neuromorphic computing. Bipolar resistive switches based on metal oxides such as TiO2 have been identified as memristive devices primarily based on the “pinched hysteresis loop” that is observed in their current-voltage (i-v) characteristics. Here we show that the mathematical definition of a memristive device provides the framework for understanding the physical processes involved in bipolar switching and also yields formulas that can be used to compute and predict important electrical and dynamical properties of the device. We applied an electrical characterization and state-evolution procedure in order to capture the switching dynamics of a device and correlate the response with models for the drift diffusion of ionized dopants (vacancies) in the oxide film. The analysis revealed a notable property of nonlinear memristors: the energy required to switch a metal-oxide device decreases exponentially with increasing applied current.

Related Papers

• → A review on device requirements of resistive random access memory (RRAM)-based neuromorphic computing(2023)53 cited
• → A Dynamical Compact Model of Diffusive and Drift Memristors for Neuromorphic Computing(2021)40 cited
• → Observation and characterization of memristor current spikes and their application to neuromorphic computation(2012)25 cited
• → A Dynamical Compact Model of Diffusive and Drift Memristors for Neuromorphic Computing (Adv. Electron. Mater. 8/2022)(2022)8 cited
• → Editorial Special Issue for 50th Birthday of Memristor Theory and Application of Neuromorphic Computing Based on Memristor—Part I(2021)12 cited