High switching endurance in TaOx memristive devices
Applied Physics Letters2010Vol. 97(23)
Citations Over TimeTop 1% of 2010 papers
J. Joshua Yang, M.-X. Zhang, John Paul Strachan, Feng Miao, Matthew D. Pickett, Ronald D. Kelley, G. Medeiros‐Ribeiro, R. Stanley Williams
Abstract
We demonstrate over 1×1010 open-loop switching cycles from a simple memristive device stack of Pt/TaOx/Ta. We compare this system to a similar device stack based on titanium oxides to obtain insight into the solid-state thermodynamic and kinetic factors that influence endurance in metal-oxide memristors.
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