Magnetic stray fields of Co-Cr microstrips measured by Lorentz microscopy
Journal of Applied Physics1994Vol. 75(6), pp. 3002–3007
Abstract
Magnetic stray fields of Co-Cr microstrips are investigated for bit stabilization in a vertical Bloch line memory (VBLM). The stray fields were revealed using Lorentz force based Foucault and differential phase contrast (DPC) techniques in a transmission electron microscope. The assumed shape of the stray fields for VBLM use has been experimentally verified. Agreement between experiment and simulation is obtained.
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