The potential formation of O2− on an oxidizing porous silicon surface a source of oxygen atoms
Journal of Applied Physics1997Vol. 82(6), pp. 3125–3128
Abstract
Evidence is presented for the formation of O2− on a porous silicon surface. The O2− present on a porous silicon surface may contribute to the infrared spectrum of air oxidized surfaces in the range encompassing ∼1100–1150 cm−1. The presence of O2− suggests its possible role as a precursor for oxygen atom formation.
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