Direct evidence for diffusion and electromigration of Cu in CuInSe2
Journal of Applied Physics1997Vol. 82(9), pp. 4282–4285
Citations Over TimeTop 10% of 1997 papers
Konstantin Gartsman, Leonid Chernyak, V. Lyahovitskaya, David Cahen, V. A. Didik, V.A. Kozlovsky, R. Sh. Malkovich, E. A. Skoryatina, V. P. Usacheva
Abstract
Cu diffusion in chalcopyrite CuInSe2 was studied directly, using 64Cu as a radioactive tracer. For diffusion from a thin surface layer, the Cu diffusion coefficients at 380 and 430 °C, were found to vary from 10−8 to 10−9 cm2/s. In case of diffusion from a volume source at 400 °C, a value of 10−10 cm2/s was calculated from diffusion profiles. Electromigration of Cu was demonstrated, by applying a strong electric field to a sample and following the redistribution of 64Cu, that had been thermally diffused into the sample, prior to electric field application.
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