Cliff-like conduction band offset and KCN-induced recombination barrier enhancement at the CdS/Cu2ZnSnS4 thin-film solar cell heterojunction
Applied Physics Letters2011Vol. 99(22)
Citations Over TimeTop 10% of 2011 papers
Marcus Bär, B. Schubert, B. Marsen, Regan G. Wilks, Sujitra Pookpanratana, Monika Blum, Stefan Krause, Thomas Unold, Wanli Yang, L. Weinhardt, Clemens Heske, Hans‐Werner Schock
Abstract
The electronic structure of the CdS/Cu2ZnSnS4 (CZTS) heterojunction was investigated by direct and inverse photoemission. The effects of a KCN etch of the CZTS absorber prior to CdS deposition on the band alignment at the respective interface were studied. We find a “cliff”-like conduction band offset at the CdS/CZTS interface independent of absorber pretreatment and a significant etch-induced enhancement of the energetic barrier for charge carrier recombination across the CdS/CZTS interface.
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