Low temperature metal induced crystallization of amorphous silicon using a Ni solution
Journal of Applied Physics1997Vol. 82(11), pp. 5865–5867
Citations Over TimeTop 10% of 1997 papers
Abstract
Amorphous silicon (a-Si) was crystallized by metal-induced crystallization (MIC) using a Ni standard absorption solution. The a-Si films spin-coated with a 5000 ppm Ni solution were crystallized at as low as 500 °C. Needlelike morphology, developed as a result of the migration of NiSi2 precipitates, appears in the MIC poly-Si. The growth of the needlelike crystallites proceeds to a direction parallel to 〈111〉. The a-Si can be fully crystallized at 500 °C for 20 h.
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