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GaAs solid state detectors for high energy physics
AIP conference proceedings1992Vol. 272, pp. 1709–1713
C. M. Buttar, J.G. Ashman, S.P. Beaumont, R. Bertin, C.N. Booth, C. Capiluppi, L. Carraresi, F. Cindolo, M. Colocci, F.H. Combley, S. D’Auria, C. Del Papa, M. Doḡru, M. Edwards, F. Fiori, F. Foster, A. Francescato, R. Gray, G. Hill, Yaonan Hou, P.A. Houston, G. Hughes, B.K. Jones, John Lynch, B. Lisowsky, J. Matheson, F. Nava, Marco Nuti, V. O’Shea, P.G. Pelfer, C. Raine, João Santana, I.J. Saunders, P. Seller, Karthik Shankar, P. Sharp, I.O. Skillicorn, T. Sloan, K. M. Smith, I. Tartoni, I. ten Have, R.M. Turnbull, U. Vanni, A. Vinattieri, A. Zichichi
Abstract
Progress in the development of detectors based on semi‐insulating GaAs for experiments at future hadron colliders is presented. Effects of neutron and gamma irradiation at the levels of 1014 ncm−2 and 20 MRad respectively, have been shown to be small. Testbeam studies have shown that microstrip detectors can detect minimum ionizing particles with a good signal to noise ratio despite having low charge collection efficiencies. The problem of charge loss in the detectors is now better understood and new detectors have shown improved charge collection efficiencies.