Low-noise epitaxial graphene on SiC Hall effect element for commercial applications
Citations Over TimeTop 18% of 2016 papers
Abstract
In this report, we demonstrate a complete Hall effect element that is based on quasi-free-standing monolayer graphene synthesized on a semi-insulating on-axis Si-terminated 6H-SiC substrate in an epitaxial Chemical Vapor Deposition process. The device offers the current-mode sensitivity of 87 V/AT and low excess noise (Hooge's parameter αH < 2 × 10−3) enabling room-temperature magnetic resolution of 650 nT/Hz0.5 at 10 Hz, 95 nT/Hz0.5 at 1 kHz, and 14 nT/Hz0.5 at 100 kHz at the total active area of 0.1275 mm2. The element is passivated with a silicone encapsulant to ensure its electrical stability and environmental resistance. Its processing cycle is suitable for large-scale commercial production and it is available in large quantities through a single growth run on an up to 4-in SiC wafer.
Related Papers
- → Monolayer Behavior of Cyclic and Linear Forms of Surfactins: Thermodynamic Analysis of Langmuir Monolayers and AFM Study of Langmuir-Blodgett Monolayers(2014)13 cited
- → Stabilization of Langmuir monolayer of hydrophobic thiocholesterol molecules(2008)8 cited
- → On the characteristics of mixed Langmuir monolayer templates containing dipalmitoyl phosphatidylcholine for gold nanoparticle formation(2009)9 cited
- → On The Properties Of Surfactant Monolayers At Low Surface Tensions(2009)
- Metal-incorporated Langmuir Monolayers and Langmuir-Blodgett Films(2004)