InGaP solar cell on Ge-on-Si virtual substrate for novel solar power conversion
Citations Over TimeTop 19% of 2018 papers
Abstract
InGaP single-junction solar cells are grown on lattice-matched Ge-on-Si virtual substrates using metal-organic chemical vapor deposition. Optoelectronic simulation results indicate that the optimal collection length for InGaP single-junction solar cells with a carrier lifetime range of 2–5 ns is wider than approximately 1 μm. Electron beam-induced current measurements reveal that the threading dislocation density (TDD) of InGaP solar cells fabricated on Ge and Ge-on-Si substrates is in the range of 104–3 × 107 cm−2. We demonstrate that the open circuit voltage (Voc) of InGaP solar cells is not significantly influenced by TDDs less than 2 × 106 cm−2. Fabricated InGaP solar cells grown on a Ge-on-Si virtual substrate and a Ge substrate exhibit Voc in the range of 0.96 to 1.43 V under an equivalent illumination in the range of ∼0.5 Sun. The estimated efficiency of the InGaP solar cell fabricated on the Ge-on-Si virtual substrate (Ge substrate) at room temperature for the limited incident spectrum spanning the photon energy range of 1.9–2.4 eV varies from 16.6% to 34.3%.
Related Papers
- → For the Bright Future—Bulk Heterojunction Polymer Solar Cells with Power Conversion Efficiency of 7.4%(2010)3,629 cited
- → Medium Bandgap Conjugated Polymer for High Performance Polymer Solar Cells Exceeding 9% Power Conversion Efficiency(2015)95 cited
- → Enhancing the efficiency of low bandgap conducting polymer bulk heterojunction solar cells using P3HT as a morphology control agent(2012)47 cited
- → Tetraperylenediimide derivative as a fullerene-free acceptor for a high-performance polymer solar cell with the high-power conversion efficiency of 10.32% with open-circuit voltage over 1.0 V(2021)9 cited
- → Estimation of conversion efficiency for partially static concentrator with III-V on Si solar cell(2017)7 cited