Unidirectional contraction in boron-implanted laser-annealed silicon
Applied Physics Letters1978Vol. 32(12), pp. 801–803
Citations Over TimeTop 10% of 1978 papers
Abstract
The lattice contraction in boron-implanted laser-annealed silicon has been studied by x-ray Bragg reflection profiles and ion channeling. The contraction was shown to be one dimensional, along the surface normal, for strains as large as 1.3%.
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