Hydrogen passivation of dislocations in silicon
Applied Physics Letters1984Vol. 45(10), pp. 1135–1137
Citations Over TimeTop 10% of 1984 papers
Abstract
The electron beam induced current method has been used to show that the principal defects passivated by hydrogen in silicon ribbon grown by the edge-defined film-fed growth technique are, in fact, dislocations. Hydrogen diffusivity for dislocation arrays has been determined to be ≥10−8 cm2/s. It is shown that deep, intragranular passivation depths of up to 250 μm can occur by hydrogen diffusion along dislocation arrays. A model is proposed wherein grain boundary passivation is viewed as a special case of dislocation passivation.
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