Measurement of hole velocity in n-type InGaAs
Applied Physics Letters1987Vol. 50(18), pp. 1260–1262
Citations Over TimeTop 14% of 1987 papers
Abstract
Hole drift velocities in n-type In0.53Ga0.47As have been determined experimentally for the first time. Measured values of the frequency response of transit-time-limited InGaAs p-i-n photodiodes were fit with the theoretical response using hole velocity as the only free parameter. Measurements over field strengths from 54 to 108 kV/cm showed the drift velocity to be relatively constant at (4.8±0.2) 106 cm/s, indicating that velocity saturation has occurred at field levels below 54 kV/cm.
Related Papers
- → The high-field drift velocity in degenerately-doped silicon nanowires(2009)27 cited
- → The dependence of saturation velocity on temperature, inversion charge and electric field in a nanoscale MOSFET(2010)7 cited
- → Analytical Analysis of Ballistic Drift Velocity in Low-dimensional Nano-devices(2010)3 cited
- → Carrier velocity in carbon nano tube field effect transistor(2008)3 cited
- → The Ultimate Drift Velocity in Two Dimensional Quantum Limit(2008)1 cited