Universal relationship between resonant frequency and damping rate of 1.3 μm InGaAsP semiconductor lasers
Applied Physics Letters1987Vol. 50(11), pp. 653–655
Citations Over TimeTop 10% of 1987 papers
Abstract
Analysis of the measured frequency response of 1.3 μm InGaAsP vapor phase regrown buried heterostructure lasers shows that there is a universal linear relationship between damping rate and resonant frequency squared with a proportionality factor of 0.32×10−9 s. This result can be explained by the intraband relaxation model of nonlinear gain.
Related Papers
- → Improved rate equations for external cavity semiconductor lasers(1989)48 cited
- → A reassessment of standard rate equations for low facet reflectivity semiconductor lasers using traveling wave rate equations(1992)10 cited
- → Semiconductor Heterojunctions(2016)19 cited
- Analytical Solutions of Rate Equations of Two-segment Absorptive Bistable Semiconductor Lasers(1995)
- → Multilongitudinal mode rate equation model for diode lasers(2003)