Evidence of room-temperature exciton by magnetophotoreflectance in epitaxial GaAs and quantum well structures
Applied Physics Letters1988Vol. 52(12), pp. 984–986
Citations Over TimeTop 25% of 1988 papers
Abstract
Photoreflectance experiments with magnetic fields up to 14.5 T are performed on epitaxial GaAs and GaAs/Ga1−xAlxAs quantum well samples at room temperature and 2 K. Our experiments show unique and direct evidence that photoreflectance structures are excitonic transitions in all of the above cases.
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