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Abstract

Gate-all-around (GAA) configurations with superior electrostatics and scaling potential are recognized as an ultimate solution for the post-Moore complementary metal oxide semiconductor (CMOS) circuits. In this case, nanowires (NWs) with a natural dangling-bond-free surface are one of the most promising channel candidates for the ultrascaled GAA field-effect transistors (FETs). Herein, we propose that the ${\mathrm{Hf}\mathrm{Sn}\mathrm{S}}_{3}$ NWs are very attractive channel materials for sub-5-nm GAA FETs, exhibiting excellent n- and p-type symmetric behaviors. In particular, holding ultrahigh phonon-limited carrier mobilities, the sub-5-nm ${\mathrm{Hf}\mathrm{Sn}\mathrm{S}}_{3}$ NW n- and p-FETs far surpass the International Technology Roadmap for Semiconductors high-performance requirements. The on-current can exceed 1000 \textmu{}A $\text{\ensuremath{\mu}}{\mathrm{m}}^{\ensuremath{-}1}$ even for 3-nm nodes while maintaining an excellent n- and p-type performance ratio close to 1. Furthermore, we reveal that the superior subthreshold swing control capability of the ${\mathrm{Hf}\mathrm{Sn}\mathrm{S}}_{3}$ NW p-FETs is attributed to the ${p}_{x}$-orbital-induced heavy-hole effective mass. This advantage can be attractive, especially for the further scaling of CMOS technology. Meanwhile, the power and delay of the ${\mathrm{Hf}\mathrm{Sn}\mathrm{S}}_{3}$ NW FETs are assessed to ensure their fast-switching and energy-efficient behaviors. Our results suggest that ${\mathrm{Hf}\mathrm{Sn}\mathrm{S}}_{3}$ NW FETs with superior and symmetric transport performance possess promising prospects for future sub-5-nm GAA complementary transistors.

Symmetric high-performance transport in n- and p-type HfSnS3 nanowire gate-all-around transistors toward sub-5-nm electronics

Abstract

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