Large Voltage-Induced Changes in the Perpendicular Magnetic Anisotropy of an MgO-Based Tunnel Junction with an Ultrathin Fe Layer
Physical Review Applied2016Vol. 5(4)
Citations Over TimeTop 1% of 2016 papers
Takayuki Nozaki, A. Kozioł‐Rachwał, Witold Skowroński, Vadym Zayets, Yoichi Shiota, Shingo Tamaru, Hitoshi Kubota, Akio Fukushima, Shinji Yuasa, Yoshishige Suzuki
Abstract
Voltage control of magnetic anisotropy (VCMA) in an ultrathin ferromagnet metal layer is a promising approach for ultralow-power spin manipulation, but interface effects spoil its efficiency for applications such as memory devices. The authors study VCMA in the fully epitaxial ultrathin Fe layer of a magnetic tunnel junction, and achieve an efficiency of almost 300 fJ V${}^{-1}$ m${}^{-1}$ with high perpendicular anisotropy, which satisfies the requirements for gigabit-class spintronic memory.
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