Surface optical phonons and hydrogen chemisorption on polar and nonpolar faces of GaAs, InP, and GaP
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Abstract
Surface optical phonons have been detected on both the polar (100) and nonpolar (110) faces of GaAs, InP, and GaP with the use of high-resolution electron-energy-loss spectroscopy. The observed frequencies (GaAs: 291, InP: 337, GaP: 396 ${\mathrm{cm}}^{\ensuremath{-}1}$) on all surfaces are in excellent agreement (within 5 ${\mathrm{cm}}^{\ensuremath{-}1}$) with theoretical predictions and were found to be independent of crystal face, bulk doping level, or method of sample preparation (cleavage in UHV versus sputter-annealing). The insensitivity of the surface-optical-phonon frequencies to the details of surface orientation, reconstruction, and near-surface stoichiometry is a consequence of the effective depth of atomic displacements (\ensuremath{\sim}200 \AA{}) which contribute to the time-dependent electrostatic potential outside the crystal. Adsorption of atomic hydrogen results in identifiable modes for the Ga-H, As-H, In-H, and P-H stretching vibrations at approximately 1880, 2110, 1700, and 2350 ${\mathrm{cm}}^{\ensuremath{-}1}$, respectively.
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