Spin-flip Raman scattering inn-type diluted magnetic semiconductors

Physical review. B, Condensed matter1985Vol. 32(1), pp. 323–340

Citations Over TimeTop 10% of 1985 papers

D. L. Peterson, D. U. Bartholomew, U. Debska, A. K. Ramdas, S. Rodríguez

Abstract

We report the results of a spin-flip Raman scattering study of electrons bound to shallow donors in the diluted magnetic semiconductors ${\mathrm{Cd}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$${\mathrm{Mn}}_{\mathrm{x}}$Te and ${\mathrm{Cd}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$${\mathrm{Mn}}_{\mathrm{x}}$Se for x\ensuremath{\lesssim}0.30 and in ${\mathrm{Cd}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$${\mathrm{Mn}}_{\mathrm{x}}$S for x=0.022 and 0.125. Spin-flip Raman scattering is observed at temperatures ranging from 1.8 K to as high as 160 K and at magnetic fields \ensuremath{\le}60 kG. The measured spin-flip energies are large and, for some samples, correspond to g values in excess of 100 at low temperatures. The enhancement of the Raman shifts results from the exchange coupling of the donor electron with the ${\mathrm{Mn}}^{2+}$ ions. The parameters of the mean-field approximation, used to describe the magnetic field and temperature dependence of g are shown to exhibit a temperature dependence for temperatures above 20 K. Finite Raman shifts are observed in the absence of a magnetic field and are attributed to the bound magnetic polaron and thermal fluctuations of the local magnetization. The temperature and magnetic field dependences of the spin-flip energies, Raman intensities, and polarizations were compared with the results of the statistical-mechanical model of Dietl and Spal/ek [Phys. Rev. B 28, 1548 (1983)]. The theory is in good agreement with the experimental results for x\ensuremath{\lesssim}0.15.

Citations Over TimeTop 10% of 1985 papers

Abstract

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