Temperature dependence of planar channeling radiation
Physical review. B, Condensed matter1987Vol. 35(1), pp. 13–17
Citations Over TimeTop 19% of 1987 papers
H. Park, J. O. Kephart, R. K. Klein, R. H. Pantell, M. V. Hynes, B. L. Berman, B. A. Dahling, S. Datz, R.L. Swent, M. J. Alguard
Abstract
Peak energies and linewidths of 54-MeV electron planar channeling radiation from a silicon crystal have been measured as a function of temperature. Our measured peak energies are compared with our theoretical calculations to obtain a Debye temperature for silicon of 495\ifmmode\pm\else\textpm\fi{}10 K. This value is appreciably lower than the value of 543 K obtained from an x-ray diffraction measurement, but is in excellent agreement with the value of 500 K obtained recently from a measurement of axial channeling radiation.
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