0.8-eV photoluminescence band inAlxGa1−xAs
Physical review. B, Condensed matter1991Vol. 44(19), pp. 10941–10944
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Abstract
We have investigated the 0.8-eV luminescence band in ${\mathrm{Al}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$As. The luminescence band is observed in metal-organic vapor-phase epitaxy materials only and is absent in materials grown by liquid-phase epitaxy and molecular-beam epitaxy. Photoluminescence excitation, excitation intensity dependence of luminescence, and two-beam differential photoluminescence measurements indicate that the band originates from the internal transition of a deep defect that is strongly coupled to the lattice.
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