Exciton dynamics in a GaAs quantum well
Physical review. B, Condensed matter1991Vol. 44(3), pp. 1395–1398
Citations Over TimeTop 10% of 1991 papers
Abstract
Time-resolved luminescence measurements in a 27-nm GaAs quantum well show that the initial temperature of the photocreated exciton distribution is determined by the excess energy of the excitation photon. Light-hole excitons lying in the band gap transfer to heavy-hole exciton states by density-dependent exciton-exciton scattering. For excitation close to the band edge, excitons cool only via LA-phonon emission. The time-resolved luminescence profile is modeled by evaluating the LA-phonon energy-loss rate.
Related Papers
- → Pump-probe spectrum of interacting one-dimensional excitons: biexcitons and J-aggregates(1995)37 cited
- → Heating by exciton and biexciton recombination in GaAs/AlGaAs quantum wells(2015)10 cited
- → Characteristics of photoluminescence due to exciton-exciton scattering in GaAs/AlAs multiple quantum wells(2009)10 cited
- → Ultrafast biexciton dynamics in a ZnO thin film(2005)9 cited
- → Effects of exciton–biexciton coherent coupling on exciton absorption in quantum dots(2004)5 cited