Dynamics of exciton relaxation in GaAs/AlxGa1−xAs quantum wells
Physical review. B, Condensed matter1992Vol. 45(12), pp. 6965–6968
Citations Over TimeTop 10% of 1992 papers
Abstract
We present an experimental study of the photoluminescence (PL) rise time of a single GaAs/${\mathrm{Al}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$As quantum well. The PL rise time is investigated as a function of the excitation energy for different temperatures at low excitation densities (\ensuremath{\approxeq}${10}^{\mathrm{\ensuremath{-}}8}$ ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}2}$). A significant slowing down of the relaxation process is observed at low temperature when exciting the quantum well at the light-hole exciton energy; the slowing down disappears as either the temperature or the excitation power is increased.
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