Magnetoresistance and electronic structure of the half-metallic ferrimagnetBiCu3Mn4O12
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Abstract
A cubic ordered perovskite $\mathrm{Bi}{\mathrm{Cu}}_{3}{\mathrm{Mn}}_{4}{\mathrm{O}}_{12}$ has been synthesized under $6\phantom{\rule{0.3em}{0ex}}\mathrm{GPa}$ and $1000\phantom{\rule{0.2em}{0ex}}\ifmmode^\circ\else\textdegree\fi{}\mathrm{C}$. $\mathrm{Bi}{\mathrm{Cu}}_{3}{\mathrm{Mn}}_{4}{\mathrm{O}}_{12}$ is a ferrimagnet with ${T}_{C}=350\phantom{\rule{0.3em}{0ex}}\mathrm{K}$ and its saturated magnetic moment is $10.5\phantom{\rule{0.3em}{0ex}}{\ensuremath{\mu}}_{B}∕\mathrm{f.u.}$ The material showed low-resistive metallic behavior and magnetoresistance (MR) below ${T}_{C}$. Its MR was observed over a wide temperature range, and the low-field MR reached $\ensuremath{-}28%$ at $5\phantom{\rule{0.3em}{0ex}}\mathrm{K}$. An electronic structure calculation revealed that it had a half-metallic nature and that the large MR observed under a low magnetic field was attributed to a spin-polarized tunneling or spin-dependent scattering effect at grain boundaries.
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