Atom-selective imaging of the GaAs(110) surface
Physical Review Letters1987Vol. 58(12), pp. 1192–1195
Citations Over TimeTop 1% of 1987 papers
Abstract
We report the first voltage-dependent scanning tunneling microscope images of a compound semiconductor surface, GaAs(110). Images show either only Ga atoms, or only As atoms, depending on the bias voltage. By combining voltage-dependent images with theoretical calculations, we quantitatively determine surface structural parameters which cannot be inferred from the images alone.
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