Microchannel heat sinks for two-dimensional high-power-density diode laser arrays
IEEE Journal of Quantum Electronics1989Vol. 25(9), pp. 1988–1992
Citations Over TimeTop 10% of 1989 papers
Abstract
The operation of a two-dimensional GaInAsP/InP diode laser array with CW power dissipation up to 500 W/cm/sup 2/ into a Si microchannel heat sink is discussed. The approximately 1*4-mm/sup 2/ laser array was used to characterize the heat sink, and the value of 0.040 degrees C cm/sup 2//W was obtained for the thermal resistance per unit area. The extrapolated value for a 1-cm/sup 2/ heated area is 0.070 degrees C cm/sup 2//W.>
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