Wordline voltage generating system for low-power low-voltage flash memories
IEEE Journal of Solid-State Circuits2001Vol. 36(1), pp. 55–63
Citations Over TimeTop 12% of 2001 papers
Tôru Tanzawa, Akira Umezawa, M. Kuriyama, T. Taura, H. Banba, T. Miyaba, H. Shiga, Yoshimichi Takano, S. Atsumi
Abstract
A low-power wordline voltage generating system is developed for low-voltage flash memories. The limit for the stand-by current including the operation current for the band-gap reference and the stand-by wordline voltage generator is discussed. The system was implemented on a 1.8-V 32-Mb flash memory fabricated with a 0.25-/spl mu/m flash memory process and achieved with very low stand-by current of 2 /spl mu/A typically, and high operating frequency of 25 MHz in read operation at 1.8 V. A low-voltage level shifter with high-speed switching is also proposed.
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