A 70-GHz f/sub T/ low operating bias self-aligned p-type SiGe MODFET
IEEE Electron Device Letters1996Vol. 17(12), pp. 586–588
Citations Over TimeTop 10% of 1996 papers
Abstract
A self-aligned process for the fabrication of SiGe p-type modulation-doped field-effect transistors (MODFETs) is described. Self-aligned devices with 0.1-μm gate-length have been fabricated and characterized. A maximum dc extrinsic transconductance of 258 mS/mm was obtained with a low turn-on resistance and very low knee voltage. Excellent high frequency performance with a unity current-gain cutoff frequency (f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T ) of 70 GHz was obtained. This excellent high frequency performance was exhibited even at drain bias as low as 0.5 V.
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