A simulation study of vertical tunnel field effect transistors
2011pp. 665–668
Citations Over Time
Abstract
We report a simulation study of the characteristics of a new tunnel field effect transistor (TFET), i.e., vertical TFET (VTFET). The new VTFET has a different working principle compared with the traditional lateral TFET (LTFET), which most of the recent studies are focused on. Although both type TFETs are based on band to band tunneling, the tunneling occurs perpendicular to the oxide-Si interface in the VTFET whereas it occurs parallel in LTFET. The VTFET has many advantages compared with the LTFET, such as a steeper subthreshold slope as the gate voltage control the tunneling directly. The steep subthreshold slope results in low OFF current and capability for low power operation.
Related Papers
- → Compact subthreshold slope modelling of short-channel double-gate MOSFETs(2009)5 cited
- → Subthreshold Behavior of Undoped DG MOSFETs(2006)12 cited
- → Two-Dimensional Model for the Subthreshold Slope in Deep-Submicron Fully-Depleted SOI MOSFET’s(2001)
- → Dataset for Effect of Subthreshold Slope on the Sensitivity of Nanoribbon Sensors(2016)
- Effect of Drain Voltage Dependent Subthreshold Voltage Reduction on Energy Efficiency in Steep Subthreshold Slope Transistors(2013)