Improving Reliability of InAs Quantum Dot Lasers on Silicon Substrates
2019pp. 1–2
Citations Over Time
Jennifer Selvidge, Justin Norman, Daehwan Jung, E. Billie Hughes, M. E. Salmon, John E. Bowers, Robert W. Herrick, Kunal Mukherjee
Abstract
Using correlated electron microscopy techniques, we characterize optoelectronic and structural properties of dislocation in InAs quantum dots (QD) structures. Results indicate that although dislocations significantly affect QD luminescence, the rate of recombination enhanced dislocation climb slows noticeably during the aging process from quantum well structures.
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