High-Performance Gate-All-Around GeOI p-MOSFETs Fabricated by Rapid Melt Growth Using Plasma Nitridation and ALD $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric and Self-Aligned NiGe Contacts
IEEE Electron Device Letters2008Vol. 29(7), pp. 805–807
Citations Over TimeTop 10% of 2008 papers
Jia Feng, Gaurav Thareja, Masaharu Kobayashi, Shulu Chen, Andrew W. Poon, Yun Bai, Peter B. Griffin, S.S. Wong, Yoshio Nishi, J.D. Plummer
Abstract
Rapid melt growth was used to fabricate gate-all-around germanium-on-insulator (GeOI) p-MOSFETs with plasma-nitrided Ge surface, $\hbox{Al}_{2}\hbox{O}_{3}$ high- $k$ gate dielectric, and self-aligned NiGe contacts. The subthreshold swing is 71 mV/dec, which is better than those of the bulk and nanowire Ge p-MOSFETs reported to date. Planar GeOI p-MOSFET arrays show 40% hole mobility enhancement at a high effective field, which is as good as bulk Ge devices.
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