A 110–150 GHz Broadband TDD Front End in SiGe BiCMOS
Abstract
This letter presents a broadband time-division duplex (TDD) front end fabricated in 0.13- $\mu $ m SiGe BiCMOS, integrating a low-noise amplifier (LNA), a power amplifier (PA), and a single-pole double-throw (SPDT) switch. By introducing Q-factor tuning and staggered matching techniques, the broadband gain response of amplifier is achieved. The SPDT exploits a shunt switch topology with an optimized broadband matching network to balance insertion loss and isolation, enabling efficient bidirectional switching between receive (RX) and transmit (TX) modes. The measured frequency band ranges from 110 to 150 GHz, with a relative bandwidth exceeding 30% and excellent return loss. In the RX mode, a maximum gain of 20 dB and a noise figure (NF) of 9 dB are achieved. In the TX mode, an output saturation power ( $P_{\mathrm {sat}}$ ) and output 1-dB compression point (OP1dB) of 12.8 and 9.2 dBm are realized, respectively. As far as we know, the design demonstrates the widest operation bandwidth among the reported D-band front ends, integrating the SPDT, PA, and LNA.
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