Self-heating and gate leakage current in a guarded MOSFET
Proceedings of the IEEE1972Vol. 60(3), pp. 342–343
Citations Over TimeTop 23% of 1972 papers
Abstract
Gate leakage current measurements of a guarded MOSFET show that device self-heating has a marked effect on the Schottky emission current. This effect can make the bias conditions for zero gate leakage current very sensitive to changes in drain voltage.
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