Proton-bombardment formation of stripe-geometry heterostructure lasers for 300 K CW operation
Proceedings of the IEEE1972Vol. 60(6), pp. 726–728
Citations Over TimeTop 1% of 1972 papers
Abstract
A method of defining the active region of stripe-geometry junction lasers by proton-bombardment-induced high-resistivity layers is described. The method yields more reproducible mode patterns and lower threshold currents than the previously used oxide insulation. The improved lasers operated continuously at heat-sink temperatures up to 110°C.
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