Template-based mesh generation for semiconductor devices
2014pp. 217–220
Citations Over TimeTop 23% of 2014 papers
Abstract
Creating multiple meshes of a semiconductor device by varying specific geometric properties, like the gate length of a MOSFET, is a crucial step for optimization or scaling processes of these devices. A geometry generation technique for semiconductor devices using geometry templates is presented and implemented in the open source meshing tool ViennaMesh, providing a convenient mechanism for creating device geometries based on a selected set of parameters. These geometries can be used by ViennaMesh to create high-quality meshes to be exported and used by simulation tools. Results of meshes for two-dimensional MOSFET and three-dimensional FinFET devices created by this technique are presented.
Related Papers
- → Error estimation and adaptive mesh generation in the 2D and 3D finite element method(1996)58 cited
- → Automatic Generation of Well Structured Meshes Using Medial Axis and Surface Subdivision(1991)13 cited
- → Generation of Non-uniform Meshes for Finite-Difference Time-Domain Simulations(2011)3 cited
- Fully Automatic Finite Element Mesh Generation for 2-D(2001)